特點(diǎn)
正向?qū)〒p耗小；正向壓降低；
芯片采用硅外延平面結(jié)構(gòu)；
封裝形式：通孔插裝（MO-078）。
質(zhì)量等級(jí)及執(zhí)行標(biāo)準(zhǔn)
G、G+級(jí)，QZJ840611；
最大額定值和電特性
貯存溫度Tstg：-55℃~150℃
工作溫度Tamb：-55℃~125℃
型號(hào)/參數(shù) | 最大額定值 | 主要電特性 |
IFM(A) | VBR(V) | VRWM(V) | IFSM(A) | IR(mA) | VFM(V) |
| IR=0.1mA |
| tp=10ms | VR=0.8VRWM | IF=IFM |
2DK540M | 5x2 | ≥40 | 30 | 60 | ≤0.5 | ≤0.65 |
2DK560M | ≥60 | 50 |
2DK580M | ≥80 | 60 | ≤0.68 |
2DK5100M | ≥100 | 80 |
2DK840M | 8x2 | ≥40 | 30 | 80 | ≤0.5 | ≤0.68 |
2DK860M | ≥60 | 50 |
2DK880M | ≥80 | 60 | ≤0.75 |
2DK8100M | ≥100 | 80 |
2DK1040M | 10x2 | ≥40 | 30 | 100 | ≤0.5 | ≤0.75 |
2DK1060M | ≥60 | 50 |
2DK1080M | ≥80 | 60 | ≤0.8 |
2DK10100M | ≥100 | 80 |
2DK10120M | ≥120 | 100 | ≤0.82 |
2DK10150M | ≥150 | 130 |
2DK15150M | 15x2 | ≥150 | 130 | 150 | ≤0.5 | ≤0.88 |
2DK15180M | ≥180 | 160 |
2DK15200M | ≥200 | 180 |
